Deep Sub-micron IDDQ Test Options
نویسنده
چکیده
The defect-free IDDQ has two major components: (i) the reverse biased p-n junction leakage current, and (ii) the transistor sub-threshold leakage (off) current. The reverse biased p-n junction leakage current can be further divided into two segments: state dependent, and state independent. The state dependent component p-n junction leakage current depends on the reverse biasing of the p-n junctions (e.g. transistor drain-substrate leakage). The state independent leakage current is due to the reverse biased wells.
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